PSMN016-100XS,127
MOSFET N-CH 100V 32.1A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. PSMN016-100XS-127 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 32.1A at 25°C. With a maximum power dissipation of 46.1W (Tc), it offers robust thermal performance. The device exhibits a low on-resistance (Rds On) of 16mOhm at 10A and 10V, ensuring minimal conduction losses. Key characteristics include a gate charge (Qg) of 46.2 nC at 10V and input capacitance (Ciss) of 2404 pF at 50V. The PSMN016-100XS-127 is housed in a TO-220F package, facilitating through-hole mounting. This MOSFET is suitable for use in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2404 pF @ 50 V |