PSMN014-60LS,115
MOSFET N-CH 60V 40A 8DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. PSMN014-60LS-115 is an N-Channel MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C (Tc). This device offers a low on-resistance of 14mOhm maximum at 10A and 10V Vgs. The PSMN014-60LS-115 is housed in a compact 8-DFN3333 (3.3x3.3) surface mount package, delivering a maximum power dissipation of 65W (Tc). Key electrical characteristics include a gate charge of 19.6 nC (max) at 10V and input capacitance of 1264 pF (max) at 30V. This component is suitable for applications in power management, automotive, and industrial sectors. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1264 pF @ 30 V |
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