PSMN013-100XS,127
MOSFET N-CH 100V 35.2A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN013-100XS-127 is an N-Channel Power MOSFET designed for robust performance. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 35.2A at 25°C (Tc). With a maximum power dissipation of 48.4W (Tc), it is suitable for demanding applications. The Rds On (Max) is 13.9mOhm at 10A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 57.5 nC and Input Capacitance (Ciss) of 3195 pF at 50V. The device is housed in a TO-220F package for through-hole mounting, with an isolated tab. Operating temperature ranges from -55°C to 175°C. This MOSFET is utilized in industrial, automotive, and power supply applications where high efficiency and reliability are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 57.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3195 pF @ 50 V |