PSMN013-100ES,127
MOSFET N-CH 100V I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN013-100ES-127 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and is packaged in an I2PAK for robust thermal management. Its low on-resistance and efficient switching characteristics make it suitable for power conversion, motor control, and automotive electronics. The PSMN013-100ES-127 is delivered in tube packaging, ensuring reliable handling and integration into automated assembly processes. This device is engineered for applications requiring high power density and reliability.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
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