PSMN012-25YLC,115
MOSFET N-CH 25V 33A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. PSMN012-25YLC-115 is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 25V drain-source breakdown voltage and a continuous drain current capability of 33A at 25°C (Tc), with a maximum power dissipation of 26W (Tc). The low on-resistance of 12.6mOhm is achieved at 10A and 10V Vgs, facilitated by a 4.5V to 10V drive voltage range. Gate charge is specified at 8.3 nC (max) at 10V, and input capacitance (Ciss) is 528 pF (max) at 12V. The MOSFET is housed in a compact LFPAK56, Power-SO8 (SC-100, SOT-669) package, suitable for surface mounting. Operating temperature range is from -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 528 pF @ 12 V |