PSMN011-30YL,115
MOSFET N-CH 30V 51A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, PSMN011-30YL-115, offers a 30V drain-source voltage and 51A continuous drain current at 25°C. This surface mount component, housed in an LFPAK56 (Power-SO8) package, features a low on-resistance of 10.7mOhm maximum at 15A and 10V Vgs. Drive voltages range from 4.5V to 10V. Key parameters include a gate charge of 14.8 nC maximum at 10V and input capacitance of 726 pF maximum at 15V. The device supports a maximum power dissipation of 49W at 25°C and operates between -55°C and 175°C. This component is utilized in automotive and industrial applications. Provided in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tj) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 726 pF @ 15 V |