PSMN010-55D,118
MOSFET N-CH 55V 75A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc.'s PSMN010-55D-118 TrenchMOS™ N-Channel Power MOSFET is engineered for high-performance switching applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The low on-resistance of 10.5mOhm at 25A and 10V (Vgs) is achieved through NXP's advanced TrenchMOS™ technology. Key electrical parameters include a gate charge (Qg) of 55 nC at 5V and an input capacitance (Ciss) of 3300 pF at 20V. Designed for surface mounting, it is housed in a TO-252-3, DPAK package. Operating across a wide temperature range from -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications in automotive, industrial, and power supply sectors. The PSMN010-55D-118 is supplied on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 20 V |
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