PSMN010-25YLC,115
MOSFET N-CH 25V 39A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN010-25YLC-115, an N-Channel Power MOSFET, features a 25V drain-source voltage and a continuous drain current (Id) of 39A at 25°C. This device in the LFPAK56, Power-SO8 package (SC-100, SOT-669) offers a maximum power dissipation of 30W (Tc). The Rds On is specified at a maximum of 10.6mOhm @ 10A, 10V, with drive voltages ranging from 4.5V to 10V. Key parameters include a gate charge (Qg) of 11 nC @ 10 V and input capacitance (Ciss) of 678 pF @ 12 V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in automotive and industrial power management. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 678 pF @ 12 V |