PSMN009-100W,127
MOSFET N-CH 100V 100A TO247-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PSMN009-100W-127 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and supports a continuous drain current (Id) of 100A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 9mOhm at 25A and 10V, contributing to minimal conduction losses. With a maximum power dissipation of 300W (Tc), it is suitable for high-power switching scenarios. Key parameters include a gate charge (Qg) of 214 nC and input capacitance (Ciss) of 9000 pF at rated voltages. The NXP PSMN009-100W-127 is housed in a TO-247-3 package with a through-hole mounting type, allowing for efficient thermal management. Operating temperature range is -55°C to 175°C (TJ). This device finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 214 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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