PSMN005-55P,127
MOSFET N-CH 55V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PSMN005-55P-127 is an N-Channel Power MOSFET in a TO-220AB package. This device features a drain-source voltage of 55V and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). The on-resistance (Rds On) is specified at 5.8mOhm maximum at 25A and 10V Vgs. Gate drive voltage ranges from 4.5V to 10V. Key characteristics include a gate charge of 103 nC (max) at 5V Vgs and input capacitance of 6500 pF (max) at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
