PSMN005-55B,118
MOSFET N-CH 55V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. presents the PSMN005-55B-118, an N-Channel MOSFET from the TrenchMOS™ series. This component features a Drain to Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 230W (Tc). The Rds On is specified at a maximum of 5.8mOhm at 25A and 10V. This surface mount device is housed in a D2PAK package (TO-263-3, D2PAK) and operates within a temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge of 103 nC at 5V and input capacitance of 6500 pF at 25V. The PSMN005-55B-118 is suitable for applications in automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
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