PSMN005-25D,118
MOSFET N-CH 25V 75A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PSMN005-25D-118, offers a 25V drain-source voltage and 75A continuous drain current at 25°C (Tc). This device features low on-resistance of 5.8mOhm at 25A and 10V, with a high continuous drain current capability. The DPAK (TO-252-3) surface mount package facilitates efficient thermal management, supporting a maximum power dissipation of 125W (Tc). Key parameters include a gate charge of 60 nC at 5V and input capacitance of 3500 pF at 20V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power, and high-efficiency power conversion systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 20 V |
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