PSMN004-60P,127
MOSFET N-CH 60V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PSMN004-60P-127 is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 75A at 25°C (Tc). The low on-resistance, specified at a maximum of 3.6mOhm at 25A and 10V, ensures efficient power transfer. With a high operating temperature range of -55°C to 175°C (TJ) and a maximum gate charge of 168 nC at 10V, the PSMN004-60P-127 is suitable for demanding environments. The input capacitance (Ciss) is rated at 8300 pF at 25V. Supplied in a TO-220AB package for through-hole mounting, this MOSFET is utilized in power supply, motor control, and automotive industries.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 168 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8300 pF @ 25 V |
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