PSMN004-55W,127
MOSFET N-CH 55V 100A TO247-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PSMN004-55W-127 is an N-channel TrenchMOS™ Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 100A at 25°C (Tc). With a low on-resistance (Rds On) of 4.2mOhm at 25A and 10V, it offers efficient power handling. The device supports a gate-source voltage range of ±15V and a threshold voltage (Vgs(th)) of 2V at 1mA. Key electrical characteristics include a maximum gate charge (Qg) of 226 nC at 5V and an input capacitance (Ciss) of 13000 pF at 25V. The MOSFET is housed in a TO-247-3 package suitable for through-hole mounting and operates across a wide temperature range from -55°C to 175°C (TJ). Its high power dissipation capability of 300W (Tc) makes it suitable for power distribution, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 226 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 25 V |
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