PSMN004-36B,118
MOSFET N-CH 36V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PSMN004-36B-118 is an N-channel power MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 36V and a continuous drain current (Id) of 75A at 25°C (Tc). Its low on-resistance (Rds On) of 4mOhm at 25A and 10V gate-source voltage (Vgs) ensures efficient power delivery. The device features a maximum power dissipation of 230W (Tc) and is housed in a surface-mount D2PAK package (TO-263-3, D2PAK). Key electrical specifications include a gate charge (Qg) of 97 nC maximum at 5V Vgs and an input capacitance (Ciss) of 6000 pF maximum at 20V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial, and power supply applications where high current and efficient switching are critical. The packaging is Tape & Reel (TR).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 36 V |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 20 V |
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