PSMN003-30B,118
MOSFET N-CH 30V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PSMN003-30B-118 is an N-Channel Power MOSFET with a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). This device features a low on-resistance (Rds(on)) of 2.8mOhm maximum at 25A and 10V Vgs, optimized for high-efficiency power switching applications. The MOSFET offers a maximum power dissipation of 230W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 170 nC at 10V Vgs and an input capacitance (Ciss) of 9200 pF at 25V Vds. The device is housed in a TO-263-3, D2PAK surface-mount package and is supplied on tape and reel. Its robust design makes it suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V |
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