NXP USA Inc. PMZ250UN-315 is a high-performance N-channel MOSFET designed for demanding electronic applications. This component is housed in a compact SOT883 package, offering excellent space efficiency for dense board designs. With a drain-source voltage (Vds) rating of 20V and a continuous drain current (Id) capability of 2.28A, the PMZ250UN-315 is well-suited for power management and switching functions. Its robust construction and optimized electrical characteristics make it a reliable choice for automotive, industrial, and consumer electronics sectors where efficient power conversion and signal integrity are critical. The Bulk packaging ensures efficient handling and integration into high-volume manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet: