PMV90EN,215
MOSFET N-CH 30V 1.9A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. presents the PMV90EN-215, an N-Channel MOSFET in a TO-236AB (SOT-23) surface mount package. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.9A at 25°C. The Rds On is specified at a maximum of 84mOhm at 1.9A and 10V gate-source voltage. Power dissipation is rated at 310mW (Ta) and 2.09W (Tc). Key electrical characteristics include a gate charge (Qg) of 4 nC maximum at 10V and input capacitance (Ciss) of 132 pF maximum at 15V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310mW (Ta), 2.09W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 132 pF @ 15 V |
Request a Quote
Clients Also Buy
PHB146NQ06LT,118
MOSFET N-CH 55V 75A D2PAK
NX3008PBKMB,315
MOSFET P-CH 30V 300MA DFN1006B-3
BUK953R2-40E,127
MOSFET N-CH 40V 100A TO220AB
