PMV65UN,215
MOSFET N-CH 20V 2.2A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PMV65UN-215 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.2A at 25°C (Ta). The device offers a low on-resistance of 76mOhm maximum at 2A and 4.5V, with a gate charge of 3.9 nC maximum at 4.5V. It supports gate drive voltages from 1.8V to 4.5V and has a maximum gate-source voltage (Vgs) of ±8V. The PMV65UN-215 utilizes advanced MOSFET technology and is housed in a SOT-23 (TO-236AB) surface mount package, supplied on tape and reel. Power dissipation is rated at 310mW (Ta) and 2.17W (Tc). This component is suitable for use in automotive, industrial, and consumer electronics sectors where efficient switching and power management are critical. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 76mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 310mW (Ta), 2.17W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 183 pF @ 10 V |
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