PMV60EN,215
MOSFET N-CH 30V 4.7A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PMV60EN-215 is an N-Channel MOSFET designed for efficient power switching applications. This component features a 30 V drain-source voltage and a continuous drain current of 4.7 A at 25°C (Tc). The device exhibits a maximum Rds On of 55 mOhm at 2 A and 10 V Vgs, with a gate charge of 9.4 nC at 10 V. Input capacitance (Ciss) is specified at 350 pF maximum at 30 V (Vds). The PMV60EN-215 is housed in a compact SOT-23 (TO-236AB) surface mount package, suitable for high-density board layouts. It operates across a temperature range of -55°C to 150°C (Tj) and has a maximum power dissipation of 280 mW (Tj). This MOSFET is commonly utilized in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280mW (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
