PMV56XN,215
MOSFET N-CH 20V 3.76A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMV56XN-215, an N-Channel TrenchMOS™ MOSFET housed in a TO-236AB (SOT-23) surface-mount package. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.76A at 25°C, with a maximum power dissipation of 1.92W (Tc). The Rds On is specified at a maximum of 85mOhm at 3.6A and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 5.4 nC at 4.5V and input capacitance (Ciss) of 230 pF at 10V. Operating temperature range is from -65°C to 150°C. This device is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.76A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.92W (Tc) |
| Vgs(th) (Max) @ Id | 650mV @ 1mA (Min) |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
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