PMV45EN,215
MOSFET N-CH 30V 5.4A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PMV45EN-215 is an N-Channel MOSFET designed for efficient power switching. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.4A at 25°C (Tc). The low on-resistance, specified as a maximum of 42mOhm at 2A and 10V (Vgs), minimizes conduction losses. With a gate charge (Qg) of 9.4 nC maximum at 10V (Vgs) and a maximum input capacitance (Ciss) of 350pF at 30V (Vds), it offers good switching performance. The component is housed in a compact SOT-23 (TO-236AB) surface-mount package, suitable for high-density board designs. Power dissipation is rated at 280mW (Tj). Operating temperature range is -55°C to 150°C (Tj). This MOSFET is utilized in applications such as power management, voltage regulation, and battery charging circuits within the automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280mW (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
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