PMV37EN,215
MOSFET N-CH 30V 3.1A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMV37EN-215 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and can handle a continuous drain current of 3.1A at 25°C. The device exhibits a low on-resistance of 36mOhm maximum at 3.1A and 10V gate-source voltage. With a gate charge of 10 nC maximum at 10V and input capacitance of 330 pF maximum at 10V Vds, it is optimized for fast switching performance. The surface mount TO-236-3, SC-59, SOT-23-3 package offers a compact footprint with a maximum power dissipation of 380mW at 25°C. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for use in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V |