PMV31XN,215
MOSFET N-CH 20V 5.9A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PMV31XN-215. This device features a 20V drain-source voltage and a continuous drain current of 5.9A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 37mOhm at 1.5A and 4.5V gate-source voltage. Gate charge (Qg) is 5.8 nC maximum at 4.5V, and input capacitance (Ciss) is 410 pF maximum at 20V. The MOSFET is housed in a SOT-23 (TO-236AB) surface mount package, with a maximum power dissipation of 280mW (Tj). Operating temperature range is from -55°C to 150°C (TJ). This component is commonly utilized in automotive and industrial applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 280mW (Tj) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 20 V |
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