PMV30XN,215
MOSFET N-CH 20V 3.2A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMV30XN-215 is a N-Channel MOSFET designed for efficient power switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3.2A at 25°C (Ta). The on-resistance (Rds On) is specified at a maximum of 35mOhm at 3.2A and 4.5V gate-source voltage. The device offers a low input capacitance (Ciss) of 420pF (max) at 15V and a gate charge (Qg) of 7.4nC (max) at 4.5V. It is packaged for surface mounting in a TO-236AB (SOT-23) configuration and operates across a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 380mW (Ta). This MOSFET is suitable for use in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 380mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 15 V |