PMV30UN,215
MOSFET N-CH 20V 5.7A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMV30UN-215, a TrenchMOS™ series N-Channel Power MOSFET designed for efficient switching applications. This component offers a 20V Drain-Source Voltage (Vdss) and a continuous drain current of 5.7A at 25°C. Key electrical characteristics include a maximum Rds(on) of 36mOhm at 2A and 4.5V Vgs, with a Gate Charge (Qg) of 7.4 nC at 4.5V. The device features a low input capacitance of 460 pF at 20V. Packaged in a standard SOT-23 (TO-236AB) surface mount configuration, the PMV30UN-215 is rated for a maximum power dissipation of 1.9W (Tc) and operates across a temperature range of -55°C to 150°C. Typical drive voltages for optimal Rds(on) are between 1.8V and 4.5V. This MOSFET is suitable for use in power management, consumer electronics, and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 1mA (Typ) |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 20 V |
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