PMV28UN,215
MOSFET N-CH 20V 3.3A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMV28UN-215, an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) of 3.3 A at 25°C. The Rds On is specified at a maximum of 32 mOhm at 3.3 A and 4.5 V gate drive. Key parameters include a Gate Charge (Qg) of 9 nC at 4.5 V and an input capacitance (Ciss) of 470 pF at 10 V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 380 mW. Packaged in a TO-236-3, SC-59, SOT-23-3 (TO-236AB) format, this MOSFET is suitable for various industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 380mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 270µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 10 V |