PMV22EN,215
MOSFET N-CH 30V 5.2A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMV22EN-215 is an N-Channel MOSFET designed for surface-mount applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 5.2A at 25°C. With a low on-resistance (Rds On) of 22mOhm at 5.2A and 10V Vgs, it offers efficient switching performance. The MOSFET is housed in a compact TO-236AB (SOT-23) package, suitable for power dissipation up to 510mW (Ta). Key parameters include a gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 480 pF at 15V. This component is utilized in various industrial sectors requiring robust power management solutions. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 510mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 15 V |