PMV20XN,215
MOSFET N-CH 30V 4.8A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMV20XN-215, an N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.8A at 25°C, with a maximum on-resistance (Rds On) of 25mOhm at 4.8A and 4.5V gate-source voltage. The device is housed in a compact SOT-23 (TO-236AB) surface-mount package, suitable for integration into automated assembly processes. Key electrical characteristics include a gate charge (Qg) of 10 nC at 4.5V and input capacitance (Ciss) of 585 pF at 15V. Operating within a temperature range of -55°C to 150°C, this MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors. Power dissipation is rated at 510mW (Ta).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 510mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 15 V |