PMV170UN,215
MOSFET N-CH 20V 1A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMV170UN-215 is a N-Channel Power MOSFET designed for surface mount applications. This component features a drain-source breakdown voltage of 20 V and a continuous drain current rating of 1 A at 25°C ambient temperature. The specified on-resistance (Rds On) is a maximum of 165 mOhms at 1 A drain current and 4.5 V gate-source voltage. Key parameters include a gate charge of 1.65 nC at 4.5 V and an input capacitance of 83 pF at 10 V drain-source voltage. Power dissipation is rated at 325 mW (ambient) and 1.14 W (case). The MOSFET is housed in a TO-236-3, SC-59, SOT-23-3 package, supplied on tape and reel. This component is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 325mW (Ta), 1.14W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 83 pF @ 10 V |
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