PMV16UN,215
MOSFET N-CH 20V 5.8A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. N-Channel MOSFET, part number PMV16UN-215. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 5.8A at 25°C. The Rds On is specified at a maximum of 18mOhm at 5.8A and 4.5V Vgs. The MOSFET is housed in a SOT-23 (TO-236AB) surface mount package and offers a maximum power dissipation of 510mW (Ta). Key parameters include a Gate Charge (Qg) of 11 nC at 4.5V and Input Capacitance (Ciss) of 670pF at 10V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in the automotive and industrial sectors. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 5.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 510mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V |