PMV117EN,215
MOSFET N-CH 30V 2.5A TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PMV117EN-215 is a 30V N-Channel MOSFET designed for surface mount applications. This component features a low on-resistance of 117mOhm at 500mA and 10V Vgs, with a continuous drain current of 2.5A. It offers a maximum power dissipation of 830mW under specified conditions. Key parameters include a gate charge of 4.6 nC at 10V and an input capacitance of 147 pF at 10V. The device is packaged in a standard SOT-23 (TO-236AB) and supplied on tape and reel. Operating temperatures range from -65°C to 150°C. This MOSFET is suitable for use in power switching and load management applications across various industries.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 147 pF @ 10 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
