PMT29EN,135
MOSFET N-CH 30V 6A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMT29EN-135 is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Ta). The Rds(on) is specified at a maximum of 29mOhm when driven at 10V with a 6A drain current. With a gate charge (Qg) of 11nC at 10V and input capacitance (Ciss) of 492pF at 15V (Vds), it offers efficient switching characteristics. The MOSFET supports a wide drive voltage range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Thermal performance includes a maximum power dissipation of 820mW (Ta) and 8.33W (Tc). The PMT29EN-135 is housed in a surface-mount SC-73 package (TO-261-4, TO-261AA) and operates across an industrial temperature range of -55°C to 150°C. This component is suitable for power management and switching solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta), 8.33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 492 pF @ 15 V |