PMT29EN,115
MOSFET N-CH 30V 6A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMT29EN-115, an N-Channel MOSFET designed for demanding applications. This component offers a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 6A at 25°C. Featuring a low Rds On of 29mOhm at 6A and 10V, it ensures efficient power handling. The device is specified with a maximum gate charge (Qg) of 11 nC at 10V and an input capacitance (Ciss) of 492 pF at 15V. Power dissipation is rated at 820mW (Ta) and 8.33W (Tc). The PMT29EN-115 is packaged in a surface mount SC-73 (TO-261-4, TO-261AA) format on tape and reel. Its operational temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta), 8.33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 492 pF @ 15 V |