PMT21EN,135
MOSFET N-CH 30V 7.4A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMT21EN-135, an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 7.4 A at 25°C (Ta). The low on-resistance, specified as 21 mOhm maximum at 7.4 A and 10 V Vgs, ensures efficient power handling. Packaged in a compact TO-261-4 (SC-73) surface mount configuration, it offers excellent thermal performance with a maximum power dissipation of 820 mW (Ta) and 8.33 W (Tc). Key parameters include a Gate Charge (Qg) of 14.4 nC at 10 V Vgs and an Input Capacitance (Ciss) of 588 pF at 15 V Vds. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors where efficient power switching is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 7.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta), 8.33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 588 pF @ 15 V |