PMT200EN,135
MOSFET N-CH 100V 1.8A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PMT200EN-135 is an N-Channel Power MOSFET with a drain-source breakdown voltage of 100V. This device features a maximum continuous drain current of 1.8A at 25°C (Ta) and low on-resistance of 235mOhm at 1.5A, 10V. The MOSFET is packaged in an SC-73 (TO-261-4) surface mount configuration, suitable for applications requiring efficient power switching. Key electrical parameters include a gate charge of 10 nC (max) at 10V and input capacitance of 475 pF (max) at 80V. Designed for operation across a temperature range of -55°C to 150°C (TJ), this component is utilized in industrial and consumer electronics power management circuits. The device supports gate drive voltages from 4.5V to 10V with a maximum gate-source voltage of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 80 V |
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