PMT200EN,115
MOSFET N-CH 100V 1.8A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMT200EN-115, an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and supports a continuous drain current of 1.8A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 235mOhm at 1.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 475 pF at 80V. With a maximum power dissipation of 800mW (Ta) and 8.3W (Tc), it is suitable for operation across a temperature range of -55°C to 150°C. The PMT200EN-115 is housed in a TO-261-4 (SC-73) surface mount package, supplied on tape and reel. This MOSFET is utilized in industrial automation and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 80 V |
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