PMR780SN,115
MOSFET N-CH 60V 550MA SC75Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PMR780SN-115 is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 550 mA at 25°C. The low on-resistance, specified as a maximum of 920 mOhm at 300 mA and 10 V gate drive, contributes to reduced power loss. With a maximum power dissipation of 530 mW (Tc), it is suitable for compact designs. Key electrical parameters include a gate charge (Qg) of 1.05 nC (max) at 10 V and an input capacitance (Ciss) of 23 pF (max) at 30 V. The device operates over a temperature range of -55°C to 150°C (TJ) and is housed in an SC-75 (SOT-416) surface-mount package, supplied on tape and reel. This MOSFET is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 550mA (Ta) |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 530mW (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-75 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.05 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23 pF @ 30 V |
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