PMR670UPE,115
MOSFET P-CH 20V 480MA SC75Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. offers the PMR670UPE-115, a P-Channel MOSFET designed for demanding applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current capability of 480mA at 25°C (Ta). With a maximum on-resistance (Rds On) of 850mOhm at 400mA and 4.5V Vgs, it ensures efficient switching. The device is housed in a compact SC-75 (SOT-416) surface mount package, facilitating high-density board designs. Power dissipation is rated at 250mW (Ta) and 770mW (Tc). Key electrical parameters include a gate charge (Qg) of 1.14 nC at 4.5V and input capacitance (Ciss) of 87 pF at 10V Vds. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 480mA (Ta) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 400mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta), 770mW (Tc) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | SC-75 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 87 pF @ 10 V |