PMR400UN,115
MOSFET N-CH 30V 800MA SC75Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ PMR400UN-115 is an N-Channel MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 800mA at 25°C. With a maximum on-resistance of 480mOhm at 200mA and 4.5V gate drive, it offers low conduction losses. The SC-75 package provides a compact footprint suitable for space-constrained designs. Key parameters include a gate charge of 0.89nC at 4.5V and input capacitance of 43pF at 25V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is utilized in various industrial and consumer electronics applications. The device is available in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 530mW (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-75 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.89 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 25 V |
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