PMR290XN,115
MOSFET N-CH 20V 970MA SC75Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ series N-Channel MOSFET, PMR290XN-115, offers a 20V drain-source voltage and a continuous drain current of 970mA at 25°C. This device features a low on-resistance of 350mOhm maximum at 200mA and 4.5V gate-source voltage. With a maximum power dissipation of 530mW at the case temperature, it is suitable for surface mount applications. The SC-75 package ensures a compact footprint for integration into designs. Key parameters include a gate charge of 0.72nC at 4.5V and an input capacitance of 34pF at 20V. The operating temperature range is -55°C to 150°C. This component is utilized in various industrial applications requiring efficient switching and power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 970mA (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 530mW (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-75 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.72 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 34 pF @ 20 V |
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