Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

PMR290UNE,115

Banner
productimage

PMR290UNE,115

MOSFET N-CH 20V 700MA SC75

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. PMR290UNE-115 is an N-Channel MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 700mA at 25°C. The Rds On is specified at a maximum of 380mOhm at 500mA and 4.5V Vgs. The device operates with a Gate-Source Voltage (Vgs) range of ±8V and a threshold voltage of 950mV at 250µA. Key parameters include a Gate Charge (Qg) of 0.68 nC at 4.5V and an Input Capacitance (Ciss) of 83 pF at 10V. Power dissipation is 250mW (Ta) and 770mW (Tc). The PMR290UNE-115 is housed in an SC-75 (SOT-416) package and is supplied on Tape & Reel (TR). This component is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C700mA (Ta)
Rds On (Max) @ Id, Vgs380mOhm @ 500mA, 4.5V
FET Feature-
Power Dissipation (Max)250mW (Ta), 770mW (Tc)
Vgs(th) (Max) @ Id950mV @ 250µA
Supplier Device PackageSC-75
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds83 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy