PMR280UN,115
MOSFET N-CH 20V 980MA SC75Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PMR280UN-115 is a 20V, N-Channel MOSFET designed for efficient power switching. This component features a low Rds(on) of 340mOhm at 200mA and 4.5V Vgs, with a continuous drain current capability of 980mA at 25°C. The device offers a gate charge of 0.89 nC at 4.5V and an input capacitance of 45 pF at 20V. Packaged in an SC-75 (SOT-416) surface mount configuration, it supports a power dissipation of 530mW at 25°C and operates across a temperature range of -55°C to 150°C. Drive voltages range from 1.8V to 4.5V, with a maximum gate-source voltage of ±8V. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 980mA (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 530mW (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-75 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.89 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 20 V |
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