PMPB20UN,115
MOSFET N-CH 20V 6.6A 6DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMPB20UN-115 is an N-Channel MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 6.6A at 25°C ambient. The PMPB20UN-115 offers a low on-resistance of 25mOhm at 6.6A and 4.5V Vgs. It is supplied in a compact 6-DFN2020MD (2x2) package, suitable for surface mounting. Key electrical characteristics include a gate charge of 7.1 nC at 4.5V Vgs and input capacitance of 460 pF at 10V Vds. Power dissipation is rated at 1.7W (ambient) and 12.5W (case). This MOSFET is engineered for operation across a wide temperature range from -55°C to 150°C. It finds application in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-DFN2020MD (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 10 V |
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