PMPB16XN,115
MOSFET N-CH 30V 7.2A 6DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMPB16XN-115 is an N-Channel MOSFET designed for efficient power switching. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 7.2A at 25°C ambient temperature. It offers a low on-resistance of 21mOhm at 7.2A and 4.5V gate-source voltage. The device is packaged in a compact 6-DFN2020MD (2x2) surface mount package, suitable for high-density applications. Key parameters include a maximum gate charge of 10.8 nC at 4.5V and an input capacitance of 775 pF at 15V. Power dissipation is rated at 1.7W (ambient) and 12.5W (case). The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in applications such as power management, battery charging circuits, and load switching within the automotive and consumer electronics industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 7.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-DFN2020MD (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 775 pF @ 15 V |
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