PMPB12UN,115
MOSFET N-CH 20V 7.9A 6DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PMPB12UN-115 is an N-channel MOSFET designed for efficient power switching. This component features a 20V drain-source breakdown voltage and supports a continuous drain current of 7.9A at 25°C ambient. With a low on-resistance of 18mOhm at 7.9A and 4.5V Vgs, it minimizes conduction losses. The device is offered in a compact 6-DFN2020MD (2x2) package suitable for surface mounting. Key electrical characteristics include a gate charge of 13 nC at 4.5V and input capacitance of 886 pF at 10V. Power dissipation is rated at 1.7W ambient and 12.5W case temperature. The MOSFET operates within a temperature range of -55°C to 150°C (TJ). This component finds application in consumer electronics and industrial power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-DFN2020MD (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 886 pF @ 10 V |
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