PMN55LN,135
MOSFET N-CH 20V 4.1A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PMN55LN-135. This device features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 4.1 A at 25°C (Tc). It offers a low on-resistance (Rds On) of 65 mOhm maximum at 2.5 A and 10 V. The gate charge (Qg) is a maximum of 13.1 nC at 10 V, with input capacitance (Ciss) not exceeding 500 pF at 20 V. Designed for surface mounting, it is housed in an SC-74 (SOT-457) package and is supplied on tape and reel. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 1.75 W (Tc). This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 20 V |
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