PMN50XP,165
MOSFET P-CH 20V 4.8A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ P-Channel MOSFET, PMN50XP-165, offers a 20V drain-source voltage with a continuous drain current of 4.8A (Tc) at 25°C. This device features a low on-resistance of 60mOhm maximum at 2.8A and 4.5V gate-source voltage, enabled by its TrenchMOS technology. The PMN50XP-165 is housed in an SC-74 (SOT-457) surface-mount package, designed for efficient thermal management with a maximum power dissipation of 2.2W (Tc). Key parameters include a gate charge of 10nC typical at 4.5V and input capacitance of 1020pF maximum at 20V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 20 V |
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