PMN49EN,135
MOSFET N-CH 30V 4.6A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, PMN49EN-135. This 30V device features a 4.6A continuous drain current capability at 25°C (Tc) and a maximum power dissipation of 1.75W (Tc). The Rds(On) is specified at 47mOhm maximum at 2A and 10V Vgs. Key parameters include a gate charge of 8.8 nC maximum at 4.5V Vgs and an input capacitance of 350pF maximum at 30V Vds. The device is housed in an SC-74 (SOT-457) surface mount package and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
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