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PMN45EN,165

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PMN45EN,165

MOSFET N-CH 30V 5.2A 6TSOP

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ PMN45EN-165 is a 30V N-Channel MOSFET designed for efficient power switching applications. This component features a continuous drain current capability of 5.2A (Tc) and a low on-resistance of 40mOhm (Max) at 3A, 10V Vgs. The device offers a low gate charge of 6.1 nC (Max) at 4.5V Vgs and an input capacitance of 495 pF (Max) at 25V Vds. With a maximum power dissipation of 1.75W (Tc) and an operating temperature range of -55°C to 150°C (TJ), it is suitable for demanding environments. The PMN45EN-165 is supplied in a compact SC-74 (SOT-457) package, ideal for surface mount assembly. This MOSFET finds application in various industries including automotive, industrial automation, and consumer electronics.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.2A (Tc)
Rds On (Max) @ Id, Vgs40mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)1.75W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageSC-74
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds495 pF @ 25 V

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